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    3 Bit Per Cell NAND Flash Memory on 19nm Technology

      Yan Li PhD
     Apr 8, 2014

    This electronic presentation is about NAND Flash Memory and semiconductors technology. NAND Flash Memory During our meeting today we will be making forward-looking statements. Any statement that refers to expectations, projections or other characterizations of future events or circumstances is a forward-looking statement, including those relating to revenue, pricing, market share, market growth, product sales, industry trends, expenses, gross margin, future memory technology, production capacity and technology transitions and future products. Actual results may differ materially from those expressed in these forward-looking statements due to the factors detailed under the caption “Risk Factors” and elsewhere in the documents we file from time-to-time with the SEC, including our annual and quarterly reports. Outline of this presentation is Introduction to 3 bits per cell, Margin loss due to temperature, X3 program algorithm, Performance and endurance trade off, High speed IO TM 400Mbps. Finally getting the conclusion from this presentations is High Speed IO interface can achieve 400MB/s which improve the system performance.

    Important Tags: NAND Flash Memory, Semiconductor Technology, Free publish online electronics presentations
    Views: 3675
    Domain: Electronics
    Category: Semiconductors

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