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    Enabling 3D NAND Devices of the Future

      Hanan Weingarten
     Jul 26, 2015
    Description:

    2D Vs 3D NAND 2D NAND limitations below 1xnm: Lithographic limitations: Additional scaling requires quad-patterning, Ultra-violet, Reliability limitations (retention, read and program disturbs): Channel isolation deterioration, Stored charge with small number of electrons (a few dozens), Increased cell to cell interference. Performance: Longer programming times, Longer read times. 2D Vs 3D NAND. 3D NAND: Solves many of the issues of 2D NAND, Instead of scaling x-y dimensions, scale-up, Scale back lithography: Feature size > 3Xnm, No double / quad patterning, Improved reliability, Higher performance (Samsung). Scaling: Through additional number of layers. Inter-cell Interference Decoupling during read operation: A Memory ModemTM is used to improve readreliability and perform decoupling: Divide interfering cells according to severity, Decode attempt with increased number of decoupling reads, according to severity Inter-cell Interference (4). Limiting interference through page program ordering: A two dimensional programming order. More rows are not fully programmed (more pages at risk) at any one time. May be an issue during ungraceful power-down A Memory ModemTM is required to efficiently handle such cases with minimal impact on performance Inter-Block Interference. With scaling block to block may become an issue: Current management algorithms assume independence, allowing erasing / programming blocks independently of others. Solution may include: Management modifications, Stronger correction on edge plane, Special allocation on edge plane.

    Important Tags: 3D NAND, 2D Vs 3D NAND,  3D NAND (unique) Considerations
    Views: 1956
    Domain: Electronics
    Category: Semiconductors


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