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    Error Characterization and Comparison of ECCs on MLC and TLC Flash Memories

      Veeresh Taranalli, Eitan Yaakobi, Paul H. Siegel
     May 6, 2015
    Description:

    Outline  Flash Memory Basics  Error Characterization  Performance comparison of BCH, LDPC codes  Various decoding techniques  Polar Codes  LP Decoding of Polar codes Flash Memory Structure - SLC  Group of cells -> Page  Group of Pages -> Block Flash Memory Structure - MLC 2 bits/cell -> MSB and LSB pages Flash Memory Structure - TLC  3 bits/cell -> MSB, CSB and LSB pages  Program/Erase (P/E) cycling of many blocks on MLC and TLC flash memories  For each block the following steps were repeated:  The block is erased.  Pseudo-random data are programmed to the block.  The data are read and errors are identified. Disclaimers:  We measured many more P/E cycles than the manufacturer’s guaranteed lifetime of the device.  The experiments were done in laboratory conditions and related factors such as temperature change, intervals between erasures, or multiple readings before erasures were not considered.

    Important Tags: Error Characterization and Comparison of ECCs on MLC and TLC Flash Memories
    Views: 2509
    Domain: Electronics
    Category: Semiconductors


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