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    Noise Modeling And Capacity Analysis For NAND Flash Memories

      Qing Li, Anxiao (Andrew) Jiang, Erich F. Haratsch
     Nov 7, 2015
    Description:

    1.Motivation: Flash memory is a significant nonvolatile memory technology. Flash memories are not reliable: Noise/disturbs: retention error, cell-to-cell interference, program disturb,etc. Contributions of this paper: Suvery noise and construct channel models, Analyse flash capacity under those models, Explore some useful schemes against noise. 2.Fundemantal concepts on flash memories: The structure of flash memories-Flash chip → · · · → flash block → flash page → flash cell. Structure and operations of flash memory cell: Flash memory cell and its representation used, Use electrons to represent data. Flash memory cell operations: Program/write: inject electrons to floating gate, Erase: remove electrons from floating gate, Read: measure the number of electrons in floating gate. Structure and operations of flash memory array: Program/read unit is a page, Erasure unit is a block. 3.Channel Modeling for Errors in Flash Memories: Inaccurate programming, Retention Error, Cell-to-cell interference, Read disturb, Pass disturb, Program disturb. 4.Capacity analysis of flash memory: In this section, we analyze the impact of noise on channel capacity with our model: Capacity degrades with flash operations, Impact of sub-threshold for flash capacity, Benefit of dynamic thresholds. 5.Conclusion and future work: We have explored noisy in NAND flash memories and their impacts on capacity, Future work: precisely characterize the mathematical formulas of noise.

    Important Tags: Flash Memory, Noise Modeling, Noise Capacity Analysis, NAND Flash Memories, Flash Memories, NAND, Future Work, The Structure Of Flash Memories, Flash Memory Cell, Flash Memory Cell
    Views: 1783
    Domain: Electronics
    Category: Semiconductors


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