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    Spin Torque MRAM Manufacturing Challenges

      Sanjeev Aggarwal Ph.D.
     Oct 12, 2015

    The Opportunity for MRAM:Current Mainstream Memory is One-Dimensional-RAM is fast, but is also “Volatile”, FLASH is “Non-Volatile”, but is also slow, limited endurance, and requires high power, A complex system is required for “Persistent RAM” or “High-Integrity NVM”; The Market for “Persistent RAM” and “High-Integrity NVM” will be ~$5B by 2019, We address this market with Discrete and Embedded MRAM technology, We are optimizing the memory for Embedded Integration (>20Bu TAM by 2018). Everspin Company Highlights:The Market Leader in Advanced MRAM Products and Solutions, Serves Large and Growing Markets (~$5B Toggle + ST-MRAM TAM by 2019), Well-Established OEM Relationships (Dell, WDC, Siemens, Bosch, BMW, Fujitsu...), Global, Cost Effective Operations, Experienced executive team, 500+ Patents & Applications Worldwide, 350+ Patents Granted Worldwide, Privately Owned by Semiconductor VCs and Strategic Investors, Proven Quality and Reliability, Qualified by Numerous Tier One (Fortune 50) Companies, Engineering and Manufacturing Focus on ST-MRAM to scale to Advanced Technology Nodes (40/28nm/- ) on 300mm, Mass-Proliferation of iMTJ/pMTJ ST-MRAM through GLOBALFOUNDRIES Partnership, Optimizing Magnetic Tunnel Junction (MTJ) Technology for Embedded Integration. ST-MRAM is Replacing Persistent DRAM Solutions by Improving Latency while Reducing Design Complexity and System Cost. Outline:ST-MRAM background, From Development to Production, 64Mb In-plane ST-MRAM in Production, 256Mb and 1Gb ST-MRAM on 300mm, Summary. ST-MRAM Technology:Write with current passing through the MTJ, Higher memory density with shrinking MTJ bit size, Perpendicular MTJ (pMTJ) bits enable higher density compared to in plane MTJ (iMTJ) bits.

    Important Tags: MRAM Manufacturing, MRAM Manufacturing Challenges, Manufacturing Challenges, MRAM Technology, MRAM Opportunities
    Views: 2646
    Domain: Electronics
    Category: Semiconductors

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